GeezerVison

This article has multiple issues. Please help improve it or discuss these issues on the talk page. (Learn how and when to remove these messages) This article relies on a single source. Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed. Find sources: "Fast Cycle DRAM" – news · newspapers · books · scholar · JSTOR (March 2024) (Learn how and when to remove this message) This article includes a list of references, related reading, or external links, but its sources remain unclear because it lacks inline citations. Please help improve this article by introducing more precise citations. (March 2024) (Learn how and when to remove this message) (Learn how and when to remove this message)

Fast Cycle DRAM (FCRAM) is a type of synchronous dynamic random-access memory developed by Fujitsu and Toshiba. FCRAM has a shorter data access latency compared to contemporary commodity SDRAMs; and is used in where the lower data access latency is more desirable than low cost and high capacity (FCRAM is a moderate cost and capacity speciality DRAM). FCRAM achieves its low latency by dividing each row into multiple sub-rows, of which only one is activated during a row-activation operation. This reduced the effective array size, improving the access time. FCRAM has a DDR SDRAM-like command set to enable memory controllers that support both DDR SDRAM and FCRAM. It also has a standard dual in-line memory module (DIMM).

• Jacob, Bruce et al. (2008). Memory Systems: Cache, DRAM, Disk. Morgan Kaufmann Publishers. pp. 494–495.

This computer hardware article is a stub. You can help Wikipedia by adding missing information.

• v
• t
• e