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Tauc representation illustrating the optical bandgap (ETauc~ 0.8 eV) of a film of amorphous Si. The insert shows their corresponding transmittance/reflectance spectra.
A Tauc plot[1] is used to determine the optical bandgap, or Tauc bandgap, of either disordered[2] or amorphous[3]semiconductors.
In his original work Jan Tauc (/taʊts/) showed that the optical absorption spectrum of amorphous germanium resembles the spectrum of the indirect transitions in crystalline germanium (plus a tail due to localized states at lower energies), and proposed an extrapolation to find the optical bandgap of these crystalline-like states.[4] Typically, a Tauc plot shows the photon energy E (= hν) on the abscissa (x-coordinate) and the quantity (αE)1/2 on the ordinate (y-coordinate), where α is the absorption coefficient of the material. Thus, extrapolating this linear region to the abscissa yields the energy of the optical bandgap of the amorphous material.
A similar procedure is adopted to determine the optical bandgap of crystalline semiconductors.[5] In this case, however, the ordinate is given by (α)1/r, in which the exponent 1/r denotes the nature of the transition:[6],[7],[8]
↑
Tauc, J. (1968). "Optical properties and electronic structure of amorphous Ge and Si". Materials Research Bulletin. 3: 37–46. doi:10.1016/0025-5408(68)90023-8.
↑MacFarlane, G. G., McLean, T. P., Quarrington, J. E. & Roberts, V. (1958). "Fine structure in the absorption-edge spectrum of Si". Physical Review. 111 (5): 1245–1254. Bibcode:1958PhRv..111.1245M. doi:10.1103/PhysRev.111.1245.{{cite journal}}: CS1 maint: multiple names: authors list (link)
↑Davis, E. A.; Mott, N. F. (1970). "Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors". Philosophical Magazine A. 22 (179): 903–922. Bibcode:1970PMag...22..903D. doi:10.1080/14786437008221061.
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