Simulation scripts used to create 3D MOSFET example used in: J. E. Sanchez and Q. Chen, "Element Edge Based Discretization for TCAD Device Simulation," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2021.3094776.

The preprint to this article is available from TechRxiv.

Please cite these project files using this DOI, or the DOI for the specific version of these files. https://doi.org/10.5281/zenodo.6879856.

Simulation scripts related to the ferroelectric capacitance examples are available as part of this repository: https://github.com/CQSim/QS-Devsim.